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地面瞬变电磁法对低阻薄层的分辨能力

胡俭 杨帆 张池 庞少东 姚伟华 张文波 李建慧

胡俭, 杨帆, 张池, 庞少东, 姚伟华, 张文波, 李建慧. 地面瞬变电磁法对低阻薄层的分辨能力[J]. 地质科技通报, 2024, 43(1): 343-351. doi: 10.19509/j.cnki.dzkq.tb20220436
引用本文: 胡俭, 杨帆, 张池, 庞少东, 姚伟华, 张文波, 李建慧. 地面瞬变电磁法对低阻薄层的分辨能力[J]. 地质科技通报, 2024, 43(1): 343-351. doi: 10.19509/j.cnki.dzkq.tb20220436
HU Jian, YANG Fan, ZHANG Chi, PANG Shaodong, YAO Weihua, ZHANG Wenbo, LI Jianhui. Resolution capability of ground-based transient electromagnetic method for low-resistivity thin layer[J]. Bulletin of Geological Science and Technology, 2024, 43(1): 343-351. doi: 10.19509/j.cnki.dzkq.tb20220436
Citation: HU Jian, YANG Fan, ZHANG Chi, PANG Shaodong, YAO Weihua, ZHANG Wenbo, LI Jianhui. Resolution capability of ground-based transient electromagnetic method for low-resistivity thin layer[J]. Bulletin of Geological Science and Technology, 2024, 43(1): 343-351. doi: 10.19509/j.cnki.dzkq.tb20220436

地面瞬变电磁法对低阻薄层的分辨能力

doi: 10.19509/j.cnki.dzkq.tb20220436
基金项目: 

国家自然科学基金项目 42022030

详细信息
    作者简介:

    胡俭, E-mail: 402294012@qq.com

    通讯作者:

    张文波, E-mail: zhwb_000@126.com

  • 中图分类号: P631

Resolution capability of ground-based transient electromagnetic method for low-resistivity thin layer

More Information
  • 摘要:

    瞬变电磁法现阶段的资料处理解释仍以一维反演为主,因此分析瞬变电磁法对薄层的分辨能力对于更好地发挥瞬变电磁法优势仍具有重要意义。采用基于Occam算法的一维反演,以100 m深度内10 m层厚的低阻薄层为例,开展了地面回线源瞬变电磁法对低阻薄层分辨能力的定性和定量研究。数值结果表明:低阻薄层电阻率与背景电阻率差异越大,薄层反演电阻率和层厚越接近于真实值;反演电阻率极小值位置始终对应于薄层位置。低阻薄层电阻率与背景电阻率比值为1:5,1:10,1:20,背景电阻率小于100 Ω·m时,瞬变电磁法能够良好探测10 m薄层的最大埋深依次为40,50,80 m;背景电阻率为200 Ω·m时,上述3个最大埋深依次为30,30,60 m。上述研究成果有助于优化瞬变电磁法野外工作参数设计和提高资料处理解释精度。

     

  • 图 1  3种标准差设置方案情况下的数据拟合曲线

    Figure 1.  Data-fitting curves for three schemes of standard deviation

    图 2  观测数据与反演计算数据的相对拟合残差

    Figure 2.  Relative residual between the observed data and inverted data

    图 3  3种标准差设置方案情况下的反演结果

    Figure 3.  Inverted results for three schemes of standard deviation

    图 4  不同埋深的100 Ω·m薄层反演结果

    Figure 4.  Inverted results for a 100 Ω·m thin layer at different depths

    图 5  不同背景电阻率情形下埋深30 m的低阻薄层反演结果

    Figure 5.  Inverted results for a low-resistivity thin layer at 30m buried depth under different ground-resistivity environments

    图 6  薄层反演电阻率及其与真实电阻率比值

    a~c.薄层反演电阻率; d~f.薄层反演电阻率与真实电阻率比值

    Figure 6.  Inverted resistivity for the low-resistivity thin layer and the ratio between the inverted resistivity and the true value

    图 7  薄层反演厚度

    a, d, g.反演电阻率小于1.5倍真实值的薄层厚度; b, e, h.反演电阻率小于2倍真实值的薄层厚度; c, f, i.反演电阻率小于3倍真实值的薄层厚度

    Figure 7.  Inverted thickness for the low-resistivity thin layer

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出版历程
  • 收稿日期:  2022-08-13
  • 录用日期:  2022-09-09
  • 修回日期:  2022-08-30

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